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  dmn2112sn document number: ds30830 rev. 4 - 2 1 of 4 www.diodes.com november 2007 ? diodes incorporated dmn2112sn new product n-channel enhancement mode field effect transistor features ? low on-resistance ? ideal for notebook computer, portable phone, pcmcia cards, and battery powered circuits ? lead free by design/rohs compliant (note 2) ? qualified to aec-q101 standards for high reliability ? esd protected gate ? "green" device (note 3) mechanical data ? case: sc-59 ? case material - molded plasti c, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminals: finish matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? marking information: see page 3 ? ordering & date code information: see page 3 ? weight: 0.008 grams (approximate) sc-59 source gate protection diode gate drain d g s esd protected top view top view pin out confi g uration equivalent circuit maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage continuous v gss 8 v drain current continuous pulsed i d 1.2 4.0 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation p d 500 mw thermal resistance, junction to ambient r ja 250 c /w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 1) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 250a zero gate voltage drain current @ t j = 25 c i dss ? ? 10 a v ds = 20v, v gs = 0v gate-body leakage i gss ? ? 10 a v gs = 8v, v ds = 0v on characteristics (note 1) gate threshold voltage v gs(th) 0.5 ? 1.2 v v ds = 10v, i d = 1.0ma static drain-source on-resistance r ds (on) ? ? 0.10 0.14 0.25 v gs = 4.5v, i d = 0.5a v gs = 2.5v, i d = 0.5a v gs = 1.5v, i d = 0.1a forward transfer admittance iy fs i ? 4.2 ? s v ds = 10v, i d =0.5a diode forward voltage v sd ? 0.8 1.1 v v gs = 0v, i s = 1a dynamic characteristics input capacitance c iss ? 220 ? pf output capacitance c oss ? 120 ? pf reverse transfer capacitance c rss ? 45 ? pf v ds = 10v, v gs = 0v f = 1.0mhz switching characteristics turn-on delay time t d(on) ? 10 ? ns turn-off delay time t d(off) ? 75 ? ns turn-on rise time t r ? 15 ? ns turn-off fall time t f ? 65 ? ns v dd = 5v, i d = 0.5a, v gs = 10v, r gen = 50 notes: 1. pulse width 300 s, duty cycle 2%. 2. no purposefully added lead. 3. diodes inc.'s "green" policy can be found on our w ebsite at http://www.diodes.com /products/lead_free/index.php.
dmn2112sn fig. 1 typical output characteristics 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 v , drain-source voltage (v) ds i, d r ain c u r r en t (a) d t =25c a 3v, 3.5v, 4v 2.5v 2.0v v= 1.0 gs 1.5v v =10v ds t = 125c a t = 25c a t = -55c a i = 0.5a d i = 1.0a d t= 25c j v= 1.5v gs v = 2.5v gs v= 4.5v gs v = 1.5v gs i = 0.5a d i = 0.1a d v = 2.5v gs v = 4.5v gs i = 0.5a, 1a d i = 0.5a, 1a d v = 10v i = 1ma ds d new product dmn2112sn document number: ds30830 rev. 4 - 2 2 of 4 www.diodes.com november 2007 ? diodes incorporated
dmn2112sn f=1mhz v=0v gs t =25c a c iss c oss c rss 2.5v v = 4.5v gs 1.5v new product 0v -4.5v ordering information (note 4) part number case packaging dmn2112sn-7 sc-59 3000/tape & reel notes: 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf . marking information ns1 ym ns1 = product type marking code ym = date code marking y = year ex: t = 2006 m = month ex: 9 = september date code key year 2007 2008 2009 2010 2011 2012 code u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d package outline dimensions a m j l d e b c h k g top view n sc-59 dim min max a 0.35 0.50 b 1.50 1.70 c 2.70 3.00 d 0.95 e ? ? g 1.90 h 2.90 3.10 j 0.013 0.10 k 1.00 1.30 l 0.35 0.55 m 0.10 0.20 n 0.70 0.80 0 8 all dimensions in mm dmn2112sn document number: ds30830 rev. 4 - 2 3 of 4 www.diodes.com november 2007 ? diodes incorporated
dmn2112sn suggested pad layout x e g y c z dmn2112sn document number: ds30830 rev. 4 - 2 4 of 4 www.diodes.com november 2007 ? diodes incorporated new product dimensions value (in mm) z 4.0 g 1.2 x 0.9 y 1.4 c 2.6 e 0.95 important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated.


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